Modeling photovoltaic modules using N-channel MOS transistor

This paper proposes accurate circuit model to simulate different types of commercial photovoltaic (PV) modules. The main component of the new model is the N-channel enhancement-mode MOSFET. The new approach simplifies the I-V output equation of PV module by avoiding the exponential term exists in the well-known diode model. Also it provides the ability to represent the whole PV module by only one MOSFET which decreases the simulation time needed to run a big system. Fast, simple and accurate algorithm is proposed based on the new circuit model. The proposed work is validated with experimental data of commercial mono-crystalline silicon, poly-crystalline silicon and copper indium diselenide (CIS) PV modules. The obtained I-V curves prove the accuracy of the new N-MOSFET Model.