Title :
A column-based pixel-gain-adaptive CMOS image sensor for low-light-level imaging
Author :
Kawahito, S. ; Sakakibara, M. ; Handoko, D. ; Nakamura, N. ; Satoh, H. ; Higashi, M. ; Mabuchi, K. ; Sumi, H.
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Japan
Abstract :
A 0.25 /spl mu/m technology CMOS image sensor employs a 4.2 /spl mu/m pitch pinned-photodiode pixel. A column amplifier and digital domain processing reduce the fixed pattern noise to 55 /spl mu/V. The saturation voltage is 1 V with a 2.5 V supply voltage, and the dynamic range is 69 dB.
Keywords :
CMOS image sensors; integrated circuit noise; random noise; 0.25 /spl mu/m technology CMOS image sensor; 0.25 micron; 1 V; 2.5 V; 4.2 micron; column amplifier; column-based pixel-gain-adaptive CMOS image sensor; digital domain processing; dynamic range; fixed pattern noise; low-light-level imaging; pinned-photodiode pixel; random noise components; saturation voltage; supply voltage; CMOS image sensors; CMOS technology; Capacitors; Charge-coupled image sensors; Circuit noise; Low-noise amplifiers; Noise level; Pixel; Semiconductor device noise; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234277
