Title :
A 0.18 /spl mu/m SiGe BiCMOS receiver and transmitter chipset for SONET OC-768 transmission systems
Author :
Meghelli, M. ; Rylyakov, A.V. ; Zier, S.J. ; Sorna, M. ; Friedman, D.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A BiCMOS CDR/1:4-DEMUX and CMU/4:1-MUX chipset targeting 40-43 Gb/s optical communications is implemented in 0.18 /spl mu/m SiGe. At 43 Gb/s and up to 100/spl deg/C chip temperature, both ICs operate at BER <10/sup -15/ and <210 fs RMS clock jitter. The receiver and transmitter chips dissipate 2.8 W and 2.3 W, respectively, from a -3.6 V supply.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; SONET; demultiplexing equipment; multiplexing equipment; optical receivers; optical transmitters; timing jitter; -3.6 V; 0.18 /spl mu/m SiGe; 0.18 micron; 100 C; 2.3 W; 2.8 W; 40 to 43 Gbit/s; BER; BiCMOS CDR/1:4-DEMUX; CMU/4:1-MUX; RMS clock jitter; SONET OC-768 transmission systems; SiGe; SiGe BiCMOS receiver transmitter chipset; chip temperature; optical communications; power dissipation; receiver chip; transmitter chip; BiCMOS integrated circuits; Bit error rate; Clocks; Germanium silicon alloys; Optical fiber communication; Optical receivers; Optical transmitters; SONET; Silicon germanium; Temperature;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234279
