Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

Author

Wei, Guannan ; Liang, Yung C. ; Samudra, Ganesh S.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore Kent Ridge, Singapore, Singapore

fYear

2011

fDate

May 30 2011-June 3 2011

Firstpage

1464

Lastpage

1468

Abstract

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC/GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

Keywords

III-V semiconductors; avalanche breakdown; gallium compounds; p-n junctions; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; SiC-GaN; Synopsys Medici simulation; avalanche breakdown voltage; gallium nitride; high power semiconductor device; ionization coefficients; physic-based model parameters; reverse characteristics; silicon carbide; wide bandgap p-n junction; Gallium nitride; Impact ionization; Materials; P-n junctions; Semiconductor process modeling; Silicon carbide; Simulation; High voltage p-n junction; SiC/GaN diode simulation; WBG power semiconductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Conference_Location

Jeju

ISSN

2150-6078

Print_ISBN

978-1-61284-958-4

Electronic_ISBN

2150-6078

Type

conf

DOI

10.1109/ICPE.2011.5944472

Filename

5944472