DocumentCode
2106529
Title
Strain Compensated InGaAs/GaAsP Single Quantum Well Thin Film Lasers Integrated onto Si Substrates
Author
Cho, Sang-Yeon ; Palit, Sabarni ; Xu, Dapeng ; Tsvid, Gene ; Jokerst, Nan ; Mawst, Luke ; Kuech, Thomas
Author_Institution
Duke Univ., Durham
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
829
Lastpage
830
Abstract
Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation.
Keywords
III-V semiconductors; MOCVD coatings; bonding processes; gallium compounds; indium compounds; quantum well lasers; InGaAs-GaAsP; Si; strain compensated single quantum well thin film lasers; strain compensation; strained single quantum well active region; Capacitive sensors; Chemical lasers; Etching; Indium gallium arsenide; Quantum well lasers; Semiconductor thin films; Substrates; Thin film circuits; Transistors; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382664
Filename
4382664
Link To Document