Title :
Direct conversion dual-band SiGe BiCMOS transmitter and receive PLL IC for CDMA/WCDMA/AMPS/GPS applications
Author :
Gard, K. ; Barnett, K. ; Dunworth, J. ; Segoria, T. ; Walker, B. ; Jianjun Zhou ; Maldonado, D. ; See, A. ; Persico, C.
Author_Institution :
Qualcomm, San Diego, CA, USA
Abstract :
A direct conversion 0.4/spl mu/m SiGe BiCMOS transmitter and receiver PLL consists of two transmitters, two PLLs, and an integrated VCO for cellular, PCS/IMT and GPS applications. The chip consumes 71mA at 2.7V with -55dBc ACPR at 885kHz offset and -134dBm/Hz noise at 45MHz offset for cellular, and 79mA, -56dBc ACPR at 1.25MHz offset, and -132dBm/Hz noise at 80MHz offset for PCS.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Global Positioning System; cellular radio; code division multiple access; phase locked loops; radiofrequency integrated circuits; semiconductor materials; transceivers; voltage-controlled oscillators; 0.4 micron; 2.7 V; 71 mA; 79 mA; CDMA/WCDMA/AMPS/PCS/IMT/GPS applications; RF transceiver; RFIC; SiGe; VCO; cellular communication; digital mobile telephone handset; direct-conversion dual-band SiGe BiCMOS transmitter and receiver PLL IC; Application specific integrated circuits; BiCMOS integrated circuits; Dual band; Germanium silicon alloys; Global Positioning System; Multiaccess communication; Personal communication networks; Phase locked loops; Silicon germanium; Transmitters;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234298
