A fully integrated zero-IF transceiver for GSM-GPRS quad band application

Author

Duvivier, E. ; Cipriani, S. ; Carpineto, L. ; Cusinato, P. ; Bisanti, B. ; Galant, F. ; Chalet, F. ; Coppola, F. ; Cercelaru, S. ; Puccio, G. ; Mouralis, N. ; Jiguet, J.C.

Author_Institution

Texas Instruments, Villeneuve Loubet, France

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

274

Abstract

A GPRS GSM850/GSM/DCS/PCS fully integrated transceiver occupies 14mm/sup 2/ in 0.35/spl mu/m SiGe technology. A direct conversion receiver, transmitter, synthesizer, VCO, voltage regulators and loop filters are fully integrated. The chip meets the GPRS specifications including settling time of 105/spl mu/s in RX mode, NF of 3dB for GSM, TX phase error of 2/spl deg/ RMS, and PLL phase noise of -84dBc/Hz at a 1kHz offset at 3.6GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cellular radio; packet radio networks; semiconductor materials; transceivers; 0.35 micron; 3.6 GHz; GPRS GSM850/GSM/DCS/PCS; GSM-GPRS quad band; SiGe BiCMOS technology; fully-integrated zero-IF transceiver; Distributed control; GSM; Germanium silicon alloys; Ground penetrating radar; Personal communication networks; Silicon germanium; Synthesizers; Transceivers; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234299

Filename

1234299