DocumentCode
2106693
Title
A 0.24/spl mu/m 2.0V 1T1MTJ 16kb NV magnetoresistance RAM with self reference sensing
Author
Gitae Jeong ; Wooyoung Cho ; Sujin Ahn ; Hongsik Jeong ; Gwanhyeob Koh ; Youngnam Hwang ; Kinam Kim
Author_Institution
Samsung Electron., Yongin, South Korea
fYear
2003
fDate
13-13 Feb. 2003
Firstpage
280
Abstract
A non-volatile 16kb magneto-RAM with a 0.24/spl mu/m design rule uses a self reference sensing scheme for reliable sensing margin. This sensing method is achieved by storing the voltage of the magneto-tunnel junction (MTJ) and afterwards storing a reference voltage of the same MTJ (self-reference), thus eliminating variation in tunneling oxide thickness. Cell size is 2.06/spl mu/m/sup 2/ and read access is 120ns.
Keywords
magnetic storage; magnetic tunnelling; magnetoresistive devices; random-access storage; 0.24 micron; 16 kbit; 2.0 V; magnetic tunnel junction; nonvolatile magnetoresistance RAM; self-reference sensing; tunneling oxide thickness; Antiferromagnetic materials; Current supplies; Driver circuits; Magnetic tunneling; Magnetoresistance; Production; Pulse amplifiers; Random access memory; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-7707-9
Type
conf
DOI
10.1109/ISSCC.2003.1234301
Filename
1234301
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