A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application

Author

Yoshida, K. ; Tsuchiya, O. ; Yamaguchi, Y. ; Kishimoto, J. ; Ikeda, Y. ; Narumi, S. ; Takase, Y. ; Furusawa, K. ; Izawa, K. ; Yoshitake, T. ; Kobayashi, T. ; Kurata, H. ; Kanemitsu, M.

Author_Institution

Device Devolopment Center, Hitachi, Japan

fYear

2003

fDate

13-13 Feb. 2003

Firstpage

288

Abstract

A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.

Keywords

CMOS memory circuits; PLD programming; flash memories; high-speed integrated circuits; 0.13 micron; 1 Gbit; 10 MB/s; CMOS process; compact write-buffer; constant-charge-injection programming; high-speed programming throughput; mass storage application; multi-bank operation; multilevel AG-AND-type flash memory; multilevel program cell technique; Clocks; Committee on Communications and Information Policy; Digital cameras; Flash memory; Isolation technology; Memory architecture; Parallel programming; Random access memory; Synchronization; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-7707-9

Type

conf

DOI

10.1109/ISSCC.2003.1234305

Filename

1234305