Title :
A 1 Gb multilevel AG-AND-type flash memory with 10 MB/s programming throughput for mass storage application
Author :
Yoshida, K. ; Tsuchiya, O. ; Yamaguchi, Y. ; Kishimoto, J. ; Ikeda, Y. ; Narumi, S. ; Takase, Y. ; Furusawa, K. ; Izawa, K. ; Yoshitake, T. ; Kobayashi, T. ; Kurata, H. ; Kanemitsu, M.
Author_Institution :
Device Devolopment Center, Hitachi, Japan
Abstract :
A 1 Gb multilevel flash memory is fabricated in a 0.13 /spl mu/m CMOS process. The chip area of 95 mm/sup 2/ is achieved using AG-AND-type cells with a multilevel program cell technique and compact write-buffer. By use of constant-charge-injection programming and multi-bank operation, high-speed programming throughput of 10 MB/s achieved.
Keywords :
CMOS memory circuits; PLD programming; flash memories; high-speed integrated circuits; 0.13 micron; 1 Gbit; 10 MB/s; CMOS process; compact write-buffer; constant-charge-injection programming; high-speed programming throughput; mass storage application; multi-bank operation; multilevel AG-AND-type flash memory; multilevel program cell technique; Clocks; Committee on Communications and Information Policy; Digital cameras; Flash memory; Isolation technology; Memory architecture; Parallel programming; Random access memory; Synchronization; Throughput;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234305
