Title :
A 1.8 V 2 Gb NAND flash memory for mass storage applications
Author :
June Lee ; Sung-Soo Lee ; Oh-Suk Kwon ; Kyeong-Han Lee ; Kyong-Hwa Lee ; Dae-Seok Byeon ; In-Young Kim ; Young-Ho Lim ; Byung-Soon Choi ; Jong-Sik Lee ; Wang-Chul Shin ; Jeong-Hyuk Choi ; Kang-Deog Suh
Author_Institution :
Samsung Electron., Hwasung, South Korea
Abstract :
A 1.8 V 2 Gb NAND flash memory is fabricated in a 90 nm process resulting in a 141 mm/sup 2/ die and a 0.044 /spl mu/m/sup 2/ effective cell. To achieve the high level of integration, critical layers are patterned with KF photolithography and phase-shift masks with proximity correction.
Keywords :
CMOS memory circuits; NAND circuits; flash memories; photolithography; 1.8 V; 2 Gbit; 90 nm; KF; KF photolithography; NAND flash memory; mass storage applications; phase-shift masks; proximity correction; Acceleration; Capacitance; Circuits; Consumer electronics; Costs; Decoding; Digital cameras; Silicon; Videos; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234306
