Title :
Symmetric SQW structure with low confinement factor for high power laser diodes
Author :
Buda, M. ; Iordache, Gh. ; Vlaicu, M. ; Cengher, D. ; Diaconescu, D.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Acad. of Sci., Bucharest, Romania
Abstract :
The paper presents a low confinement laser diode structure designed for high power operation. The attenuation coefficient is lower than 1 cm-1 and is probably due to free carrier absorption on injected carriers. The threshold current density is 800 A/cm2 and the differential efficiency is 36% (both uncoated facets) for 5 mm long devices. The internal efficiency is 50%. All values are measured in pulsed conditions (100 ns pulse width, 1 kHz repetition rate)
Keywords :
current density; laser cavity resonators; quantum well lasers; 100 ns; 36 percent; 5 mm; 50 percent; attenuation coefficient; confinement factor; differential efficiency; free carrier absorption; high power laser diodes; pulsed conditions; repetition rate; symmetric SQW structure; threshold current density; uncoated facets; Absorption; Diode lasers; Position measurement; Pulse measurements; Space vector pulse width modulation; Threshold current;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557342
