DocumentCode
2107563
Title
Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
Author
Ee, Yik-Khoon ; Arif, Ronald A. ; Tansu, Nelson ; Li, Hongwei ; Chan, Helen M. ; Vinci, Richard P. ; Capek, Pavel ; Jha, Naveen K. ; Dierolf, Volkmar
Author_Institution
Lehigh Univ., Bethlehem
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
902
Lastpage
903
Abstract
Metalorganic vapor phase epitaxy of InGaN quantum wells on GaN template grown on nano-patterned AGOG sapphire substrate leads to improved luminescence intensity by 1.89-2.21-times, presumably due to the reduced defect density.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; vapour phase epitaxial growth; InGaN; metalorganic vapor phase epitaxy; nano-patterned AGOG sapphire substrate; photoluminescence; quantum wells; Aluminum oxide; Epitaxial growth; Epitaxial layers; Gallium nitride; Light emitting diodes; Materials science and technology; Optical materials; Photoluminescence; Scanning electron microscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382701
Filename
4382701
Link To Document