• DocumentCode
    2107570
  • Title

    A high performance GaAs MMIC transceiver for personal handy phone system (PHS)

  • Author

    Fujimoto, Kazuhisa ; Kunihisa, Taketo ; Yamamoto, Shinji ; Fujimoto, Hiromasa ; Ota, Yorito ; Ishikawa, Osamu

  • Author_Institution
    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. 3-1-1, Yagumo-nakamachi, Moriguchi, Osaka 570, JAPAN
  • Volume
    2
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    926
  • Lastpage
    930
  • Abstract
    A high performance GaAs MMIC transceiver has been developed for the Personal Handy phone System (PHS), Japan´s digital cordless telephone system. The MMIC includes a T/R switch, a Low Noise Amplifier (LNA) and a Power Amplifier (PA), which offers significant advantages in RF performance in comparison with silicon devices. In receive mode, the power gain and the noise figure including T/R switch are 15 dB and 2.4 dB, respectively. In transmit mode, the MMIC including T/R switch exhibits an overall power added efficiency (PAE)-of 25.5% and produces an output power of 21 dBm with an adjacent channel leakage power (Padj) of ¿56.2 dBc (600 kHz offset) at 1.9 GHz for ¿/4-shift QPSK modulated signal. A very small chip size of 1.0 mm × 2.7 mm is also realized. This is one of the smallest GaAs MMICs that have been reported with the same functionality.
  • Keywords
    Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Radio frequency; Radiofrequency amplifiers; Silicon devices; Switches; Telephony; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.337097
  • Filename
    4137311