DocumentCode :
2107570
Title :
A high performance GaAs MMIC transceiver for personal handy phone system (PHS)
Author :
Fujimoto, Kazuhisa ; Kunihisa, Taketo ; Yamamoto, Shinji ; Fujimoto, Hiromasa ; Ota, Yorito ; Ishikawa, Osamu
Author_Institution :
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. 3-1-1, Yagumo-nakamachi, Moriguchi, Osaka 570, JAPAN
Volume :
2
fYear :
1995
fDate :
4-4 Sept. 1995
Firstpage :
926
Lastpage :
930
Abstract :
A high performance GaAs MMIC transceiver has been developed for the Personal Handy phone System (PHS), Japan´s digital cordless telephone system. The MMIC includes a T/R switch, a Low Noise Amplifier (LNA) and a Power Amplifier (PA), which offers significant advantages in RF performance in comparison with silicon devices. In receive mode, the power gain and the noise figure including T/R switch are 15 dB and 2.4 dB, respectively. In transmit mode, the MMIC including T/R switch exhibits an overall power added efficiency (PAE)-of 25.5% and produces an output power of 21 dBm with an adjacent channel leakage power (Padj) of ¿56.2 dBc (600 kHz offset) at 1.9 GHz for ¿/4-shift QPSK modulated signal. A very small chip size of 1.0 mm × 2.7 mm is also realized. This is one of the smallest GaAs MMICs that have been reported with the same functionality.
Keywords :
Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; Radio frequency; Radiofrequency amplifiers; Silicon devices; Switches; Telephony; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
Type :
conf
DOI :
10.1109/EUMA.1995.337097
Filename :
4137311
Link To Document :
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