Title :
An integrated 5.2GHz CMOS T/R switch with LC-tuned substrate bias
Author :
Talwalkar, N. ; Yue, C.P. ; Wong, S.S.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
A 0.56mm/sup 2/ T/R switch in 0.18/spl mu/m CMOS achieves 1.5dB insertion loss, 28dBm P/sub 1cB/, 30dB isolation and 4kV HBM ESD rating. The switch uses an on-chip LC-tuned substrate biasing technique to enhance linearity and allows the LNA and PA to be matched independently. Power dissipation is 30/spl mu/W.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low-power electronics; transceivers; 0.18 micron; 1.5 dB; 30 muW; 4 kV; 5.2 GHz; CMOS; CMOS RF transceivers; HBM ESD rating; LC-tuned substrate bias; LNA; PA; T/R switch; linearity; low-power wireless systems; CMOS process; Communication switching; Electrostatic discharge; Impedance; Insertion loss; Receiving antennas; Resistors; Switches; Transmitting antennas; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7707-9
DOI :
10.1109/ISSCC.2003.1234336
