• DocumentCode
    2107588
  • Title

    An integrated 5.2GHz CMOS T/R switch with LC-tuned substrate bias

  • Author

    Talwalkar, N. ; Yue, C.P. ; Wong, S.S.

  • Author_Institution
    Stanford Univ., CA, USA
  • fYear
    2003
  • fDate
    13-13 Feb. 2003
  • Firstpage
    362
  • Abstract
    A 0.56mm/sup 2/ T/R switch in 0.18/spl mu/m CMOS achieves 1.5dB insertion loss, 28dBm P/sub 1cB/, 30dB isolation and 4kV HBM ESD rating. The switch uses an on-chip LC-tuned substrate biasing technique to enhance linearity and allows the LNA and PA to be matched independently. Power dissipation is 30/spl mu/W.
  • Keywords
    CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low-power electronics; transceivers; 0.18 micron; 1.5 dB; 30 muW; 4 kV; 5.2 GHz; CMOS; CMOS RF transceivers; HBM ESD rating; LC-tuned substrate bias; LNA; PA; T/R switch; linearity; low-power wireless systems; CMOS process; Communication switching; Electrostatic discharge; Impedance; Insertion loss; Receiving antennas; Resistors; Switches; Transmitting antennas; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-7707-9
  • Type

    conf

  • DOI
    10.1109/ISSCC.2003.1234336
  • Filename
    1234336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2107588