DocumentCode :
2107599
Title :
Ultraviolet Stimulated Emission with a Low Lasing Threshold from ZnO Thin Films grown by Atomic Layer Deposition
Author :
Chen, M.J. ; Chen, H.C. ; Wu, M.K. ; Cheng, Y.C. ; Tsai, F.Y.
Author_Institution :
Nat. Taiwan Univ., Taipei
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
906
Lastpage :
907
Abstract :
ZnO thin films were grown on sapphire substrates by atomic layer deposition (ALD) followed with high-temperature post-annealing. A low threshold for the onset of stimulated emission was observed at excitation intensity of 49.2 kW/cm2.
Keywords :
II-VI semiconductors; annealing; atomic layer deposition; semiconductor thin films; stimulated emission; zinc compounds; Al2O3; ZnO; atomic layer deposition; high-temperature post-annealing; low lasing threshold; sapphire substrates; thin film growth; ultraviolet stimulated emission; Atomic layer deposition; Chemical vapor deposition; Crystallization; Laser excitation; Materials science and technology; Molecular beam epitaxial growth; Sputtering; Stimulated emission; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382703
Filename :
4382703
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2107599
بازگشت