DocumentCode :
2108038
Title :
Pulsed voltage converter with bipolar output voltages up to 10 kV for Dielectric Barrier Discharge
Author :
Tastekin, D. ; Nguyen, Q.K. ; Lunk, A. ; Roth-Stielow, J.
Author_Institution :
Inst. of Power Electron. & Electr. Drives, Univ. of Stuttgart, Stuttgart, Germany
fYear :
2011
fDate :
May 30 2011-June 3 2011
Firstpage :
1558
Lastpage :
1565
Abstract :
For pulsed power applications special pulsed voltage converters are needed. This paper presents an approach for a pulsed power converter, which generates bipolar output voltages up to 10 kV with extremely fast voltage slopes and high repetition rates. The topology is based on a H-bridge with a 10 kV dc-link. The output voltage and current of the pulsed voltage converter are adapted for the operation with Dielectric Barrier Discharge. To avoid the use of spark gaps due to their limited lifetime and thus to the lifetime of the converter, series stacked MOSFETs are used to realize a switch with a high blocking voltage. A balancing network for the series stacked MOSFETs is introduced as well as an adequate gate drive circuit. A matching method for the capacitive load is described, to achieve a maximum voltage slope at this capacitive load. To validate the theoretical considerations a prototype and measurements are presented.
Keywords :
MOSFET; dielectric materials; power convertors; power semiconductor devices; pulsed power supplies; H-bridge topology; balancing network; bipolar output voltages; blocking voltage; capacitive load; dielectric barrier discharge; gate drive circuit; matching method; pulsed power converter; pulsed voltage converter; series stacked MOSFET; spark gaps; voltage 10 kV; voltage slopes; Capacitance; Circuit faults; Logic gates; MOSFETs; RLC circuits; Switches; Transient analysis; Inductive Gate Drive Circuit; Power Supply for Dielectric Barrier Discharge; Pulsed Voltage Converter; Series Stacked MOSFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
ISSN :
2150-6078
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
Type :
conf
DOI :
10.1109/ICPE.2011.5944531
Filename :
5944531
Link To Document :
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