Title :
Effect of γ-irradiation on photoluminescence of porous silicon
Author :
Astrova, E.V. ; Emtsev, V.V. ; Lebedev, A.A. ; Poloskin, D.S. ; Remenyuk, A.D. ; Rud, Yu.V. ; Vitman, R.F.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Properties of Porous Silicon (PS) subjected to gamma irradiation in an air ambient and in vacuum have been studied. Gamma-irradiation was carried out in usual room atmosphere, and in evacuated tubes. The samples of porous silicon were investigated by means of photoluminescence (PL) and infrared (IR) absorption. IR absorption measurements showed variations of the intensity of Si-H and Si-O bands with the irradiation dose
Keywords :
elemental semiconductors; gamma-ray effects; infrared spectra; photoluminescence; porous materials; silicon; γ-irradiation; Si; infrared absorption; photoluminescence; porous Si; Photoluminescence; Silicon;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557346
