DocumentCode :
2108597
Title :
Memory Efficient Scattering Matrix Device Simulation By Decomposing The Effect Of Carrier Scattering And Field Acceleration
Author :
Stettler, Mark A. ; Alam, Muhammad A. ; Lundstrom, Mark S.
Author_Institution :
Purdue University
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
44
Lastpage :
45
Keywords :
Acceleration; Boltzmann equation; Computational modeling; Electrons; Gallium arsenide; Matrix decomposition; Scattering; Slabs; Sparse matrices; Symmetric matrices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724716
Filename :
724716
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2108597
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