DocumentCode :
2108613
Title :
Practical implementation of an interleaved boost converter using SiC diodes for PV applications
Author :
Ho, C.N.M. ; Breuninger, H. ; Pettersson, S. ; Escobar, G. ; Serpa, L. ; Coccia, A.
Author_Institution :
Corp. Res., ABB Switzerland Ltd., Baden-Dattwil, Switzerland
fYear :
2011
fDate :
May 30 2011-June 3 2011
Firstpage :
372
Lastpage :
379
Abstract :
The implementation of an interleaved boost converter using SiC diodes for PV applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180 degree phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse recovery current ideally, which reduces the commutation losses of the switches. Such advantage from the SiC diodes can make the converter system achieve higher efficiency and higher power density by reducing the requirement of the cooling system. This paper presents also an optimization study of the size and efficiency of the interleaved boost converter. Based on (1) the steady-state characteristic of the topology, (2) the static and dynamic characteristics of the switching cells, (3) the loss model of the magnetic components and (4) the cooling system design, the paper provides a set of design criteria, procedures and experimental results for a 2.5 kW interleaved boost converter using SiC diodes prototype.
Keywords :
Schottky diodes; carbon compounds; commutation; power convertors; power semiconductor diodes; power semiconductor switches; silicon compounds; solar cells; wide band gap semiconductors; CoolMOS switching device; PV panel; Schottky diode; SiC; SiC diode; commutation loss; interleaved boost converter; optimization; power 2.5 kW; switching cell; zero reverse recovery current; Core loss; Inductors; Inverters; Schottky diodes; Silicon carbide; Switches; MOSFET; PV; Power semiconductor; SiC; diode; interleaved boost converter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
ISSN :
2150-6078
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
Type :
conf
DOI :
10.1109/ICPE.2011.5944553
Filename :
5944553
Link To Document :
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