• DocumentCode
    2108816
  • Title

    Optical, properties of photoluminescent porous gallium phosphide

  • Author

    Belogorokhov, I. ; Karavanskii, V.A. ; Danilin, A.B. ; Belogorokhova, L.I.

  • Author_Institution
    Centre for Anal. of Substances, Acad. of Sci., Moscow, Russia
  • Volume
    1
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    225
  • Abstract
    Nanopore gallium phosphide has been produced, and its optical characteristics have been studied. There is intense photoluminescence near the absorption edge. There are additional IR absorption bands. Measurements of the Raman scattering and IR reflection spectra reveal significant changes in the phonon spectrum
  • Keywords
    III-V semiconductors; Raman spectra; gallium compounds; infrared spectra; nanostructured materials; phonon spectra; photoluminescence; porous materials; reflectivity; GaP; IR absorption bands; IR reflection spectra; Raman scattering; absorption edge; nanoporous materials; phonon spectrum; photoluminescence; Chemicals; Frequency; Gallium compounds; Optical reflection; Optical scattering; Phonons; Raman scattering; Silicon; Substrates; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557347
  • Filename
    557347