Title :
Optical, properties of photoluminescent porous gallium phosphide
Author :
Belogorokhov, I. ; Karavanskii, V.A. ; Danilin, A.B. ; Belogorokhova, L.I.
Author_Institution :
Centre for Anal. of Substances, Acad. of Sci., Moscow, Russia
Abstract :
Nanopore gallium phosphide has been produced, and its optical characteristics have been studied. There is intense photoluminescence near the absorption edge. There are additional IR absorption bands. Measurements of the Raman scattering and IR reflection spectra reveal significant changes in the phonon spectrum
Keywords :
III-V semiconductors; Raman spectra; gallium compounds; infrared spectra; nanostructured materials; phonon spectra; photoluminescence; porous materials; reflectivity; GaP; IR absorption bands; IR reflection spectra; Raman scattering; absorption edge; nanoporous materials; phonon spectrum; photoluminescence; Chemicals; Frequency; Gallium compounds; Optical reflection; Optical scattering; Phonons; Raman scattering; Silicon; Substrates; Tellurium;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557347
