Title :
Characterization and large signal modeling of InP HEMT devices
Author :
Bengtsson, Lars ; Garcia, Mikael ; Karisson, Christer ; Rorsman, Niklas ; Zirath, Herbert ; Angelov, Litcho
Author_Institution :
Department of Microwave Technology, Chalmers University of Technology, S-412 96 Göteborg, Sweden
Abstract :
Some recent modeling results of Chalmers manufactured InP HEMT devices are presented in this paper. Device models and measurements as well as comparison to simulation programs are studied. The equivalent circuit and large signal model are verified by comparing measurements and computer simulations for DC characteristics, S-parameters and power spectrum.
Keywords :
Circuit simulation; Computational modeling; Computer simulation; Equivalent circuits; HEMTs; Indium phosphide; Power measurement; Pulp manufacturing; Scattering parameters; Virtual manufacturing;
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
DOI :
10.1109/EUMA.1995.337148
