Title :
1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology
Author :
Yodprasit, Uroschanit ; Katayama, Kengo ; Fujimoto, Richard ; Motoyoshi, Mizuki ; Fujishima, Minoru
Author_Institution :
Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany
Abstract :
In this paper, design and characterization of a medium-power power amplifier targeted for short-range wireless communications in W-band frequency are presented. The power amplifier consists of six stages of common-source gain stages biased in class-A mode to maximize the power gain. The matching networks are based on slow-wave transmission lines in order to compact the layout. Fabricated in a 65-nm CMOS process, the power amplifier achieves a maximum power gain of 8.5 dB at 101 GHz and a 3-dB bandwidth of 18 GHz. The power amplifier delivers a saturation power of 7.1 dBm using a 1.2-V supply voltage and consumes 189 mW.
Keywords :
CMOS integrated circuits; high-frequency transmission lines; millimetre wave power amplifiers; slow wave structures; W-band frequency; class-A mode; common-source gain stages; frequency 101 GHz; frequency 18 GHz; matching networks; power 189 mW; power amplifier; short-range wireless communications; size 65 nm; slow-wave transmission lines; voltage 1.2 V; Bandwidth; CMOS integrated circuits; CMOS technology; Gain; Impedance; Modulation; Power measurement;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656291
