Predicting IGBT junction temperature under transient condition

Author

Ahmed, M.M.R. ; Putrus, Ghanim A. ; Ran, Li

Author_Institution

Sch. of Eng., Northumbria Univ., Newcastle upon Tyne, UK

Volume

3

fYear

2002

fDate

2002

Firstpage

874

Abstract

In this paper, a new method to predict the junction temperature of a solid-state switch under transient conditions is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified. A simulation work has been carried out on a single IGBT under different conditions using MATLAB/SIMULINK. The results show that the proposed method is effective to predict the junction temperature of the solid-state device during transient conditions and is applicable to other devices such as diodes and thyristors.

Keywords

bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device models; thermal analysis; IGBT junction temperature prediction; MATLAB/SIMULINK; computer simulation; instantaneous energy loss measurement; manufacturers data sheet; solid-state switch; thermal model; thermal model parameters; transient condition; transient conditions;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on

Print_ISBN

0-7803-7369-3

Type

conf

DOI

10.1109/ISIE.2002.1025848

Filename

1025848