DocumentCode :
2109065
Title :
Short circuit transient behavior of IGBT devices in series connections
Author :
Frisina, F. ; Melito, Maurizio ; Musumeci, S. ; Pagano, R. ; Raciti, Angelo
Author_Institution :
DEES-ARIEL, Catania Univ., Italy
Volume :
3
fYear :
2002
fDate :
2002
Firstpage :
878
Abstract :
The need of devices for medium-range power converters gives rise to a growing interest for the series connections of IGBTs. In this case the control of the voltage sharing across the string of series-connected devices as well as their protection during the short circuit transients are important issues. In this paper is presented an exhaustive analysis of the electrical quantities and device parameters affecting the voltage sharing across the series strings of IGBTs in short circuit conditions In particular, hard switching fault (HSF) and fault under load (FUL) are investigated, in the case of series connections of devices, by carrying out simulation runs and experimental tests in order to understand the behavior of the IGBTs in these critical conditions. Advantages and disadvantages of the voltage sharing techniques are discussed with reference to the failure in short-circuit occurring on the series connection of devices.
Keywords :
bipolar transistor switches; failure analysis; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device reliability; semiconductor device testing; short-circuit currents; experimental tests; fault under load; hard switching fault; medium-range power converters; series-connected IGBT devices; short circuit transient behavior; short-circuit failures; simulation runs; voltage sharing techniques;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on
Print_ISBN :
0-7803-7369-3
Type :
conf
DOI :
10.1109/ISIE.2002.1025849
Filename :
1025849
Link To Document :
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