DocumentCode

2109070

Title

A Physics-based Model For Transient Diffusion Of Dopants In Si

Author

Cowern, N.E.B.

Author_Institution

Philips Research Laboratories

fYear

1993

fDate

14-15 May 1993

Firstpage

50

Lastpage

51

Keywords

Annealing; Electrons; Furnaces; Implants; Ion implantation; Laboratories; Predictive models; Robustness; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

Print_ISBN

0-7803-1338-0

Type

conf

DOI

10.1109/VPAD.1993.724718

Filename

724718