Title :
A length-scalable compact model for InP DHBTs
Author :
Nardmann, T. ; Schroter, Michael ; Sakalas, Paulius ; Lee, Bang-Wook
Author_Institution :
CEDIC, Dresden Univ. of Technol., Dresden, Germany
Abstract :
A parameter set for a modified HICUM/Level0 compact model has been extracted for an InP DHBT production technology. The parameters can be scaled to describe devices of different emitter lengths very well by using simple scaling equations. This indicates that major elements of the equivalent circuit are estimated correctly and is the first step towards a fully scalable compact model for a InP HBT technology.
Keywords :
equivalent circuits; heterojunction bipolar transistors; indium compounds; semiconductor device models; HICUM/Level0 compact model; InP; InP DHBT production technology; emitter length; equivalent circuit; length-scalable compact model; scaling equation; Computational modeling; Double heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Mathematical model; DHBT; HICUM; InP; compact modeling;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
DOI :
10.1109/ISCDG.2013.6656298
