• DocumentCode
    2109306
  • Title

    Dynamic-clustering And Grain-growth Kinetics Effects On Dopant Diffusion In Polysilicon

  • Author

    Hane, M. ; Hasegawa, S.

  • Author_Institution
    NEC Corporation
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    52
  • Lastpage
    53
  • Keywords
    Annealing; Equations; Grain boundaries; Grain size; Kinetic theory; Microelectronics; Optical films; Semiconductor process modeling; Solid modeling; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724719
  • Filename
    724719