DocumentCode
2109306
Title
Dynamic-clustering And Grain-growth Kinetics Effects On Dopant Diffusion In Polysilicon
Author
Hane, M. ; Hasegawa, S.
Author_Institution
NEC Corporation
fYear
1993
fDate
14-15 May 1993
Firstpage
52
Lastpage
53
Keywords
Annealing; Equations; Grain boundaries; Grain size; Kinetic theory; Microelectronics; Optical films; Semiconductor process modeling; Solid modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN
0-7803-1338-0
Type
conf
DOI
10.1109/VPAD.1993.724719
Filename
724719
Link To Document