Robustness of the base resistance extraction method for SiGe HBT devices

In device modelling and simulation the base resistance is a crucial parameter for RF characteristics such as the maximum frequency of oscillation (f_max) and noise figure (NF_min). The robustness and reliability of a well-established extraction procedure is analysed using measurement data from a state-of-the-art SiGeC HBT technology. The influence of variation of key technology parameters on the extraction flow and extracted parameters is evaluated using data from a process split. The sheet resistances obtained from the measured date are used in a simulation trial. The suitability and robustness of the method is further evaluated using synthetic data from numerical device simulation with one-dimensional test structures.