DocumentCode :
2109517
Title :
Microbolometer technology using serial pn-diodes
Author :
Etter, Daniel B. ; Sun, Sen ; Hutter, Franz X. ; Burghartz, Joachim N. ; Utermohlen, Fabian ; Herrmann, Ingo
Author_Institution :
Inst. fur Mikroelektron. (IMS CHIPS), Stuttgart, Germany
fYear :
2013
fDate :
26-27 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
A fabrication process for a thermo-diode microbolometer array is presented. The process is based on a sintered porous silicon (sPS) technique adopted from Chipfilm™ technology to enable vertical thermal insulation of the pixels. In addition, the process offers the possibility to have more than one diode per pixel connected in series. It is demonstrated that this boosts the temperature sensitivity of the device.
Keywords :
bolometers; elemental semiconductors; p-i-n diodes; sensitivity; silicon; thermal insulation; Chipfilm technology; fabrication process; sPS technique; serial pn-diodes; sintered porous silicon technique; temperature sensitivity; thermo-diode microbolometer array; vertical thermal insulation; Arrays; Fabrication; Insulation; Silicon; Temperature; Temperature measurement; Temperature sensors; Microbolometer; pn-junction diode; sintered porous Silicon (sPS); temperature sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
Type :
conf
DOI :
10.1109/ISCDG.2013.6656311
Filename :
6656311
Link To Document :
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