DocumentCode
2109517
Title
Microbolometer technology using serial pn-diodes
Author
Etter, Daniel B. ; Sun, Sen ; Hutter, Franz X. ; Burghartz, Joachim N. ; Utermohlen, Fabian ; Herrmann, Ingo
Author_Institution
Inst. fur Mikroelektron. (IMS CHIPS), Stuttgart, Germany
fYear
2013
fDate
26-27 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
A fabrication process for a thermo-diode microbolometer array is presented. The process is based on a sintered porous silicon (sPS) technique adopted from Chipfilm™ technology to enable vertical thermal insulation of the pixels. In addition, the process offers the possibility to have more than one diode per pixel connected in series. It is demonstrated that this boosts the temperature sensitivity of the device.
Keywords
bolometers; elemental semiconductors; p-i-n diodes; sensitivity; silicon; thermal insulation; Chipfilm technology; fabrication process; sPS technique; serial pn-diodes; sintered porous silicon technique; temperature sensitivity; thermo-diode microbolometer array; vertical thermal insulation; Arrays; Fabrication; Insulation; Silicon; Temperature; Temperature measurement; Temperature sensors; Microbolometer; pn-junction diode; sintered porous Silicon (sPS); temperature sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location
Dresden
Print_ISBN
978-1-4799-1250-6
Type
conf
DOI
10.1109/ISCDG.2013.6656311
Filename
6656311
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