Title :
Electrical and structural properties of anodized porous silicon
Author :
Ciurea, M.L. ; Pentia, E. ; Lazar, Mircea ; Belu-Marian, A. ; Zavaliche, F. ; Manaila, R.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Acad. of Sci., Bucharest, Romania
Abstract :
The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation
Keywords :
X-ray diffraction; anodised layers; dark conductivity; elemental semiconductors; lattice constants; oxidation; porous materials; semiconductor thin films; silicon; 150 to 300 K; Si; X-ray diffraction; anodized porous Si; conduction mechanism; dark conductivity; lattice parameter; surface oxidation; temperature dependence; Conductivity measurement; Current measurement; Dark current; Lattices; Optical diffraction; Optical films; Oxidation; Silicon; Temperature dependence; X-ray diffraction;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557350
