DocumentCode :
2109730
Title :
Resistive switching in thin multiferroic films
Author :
Bogusz, Agnieszka ; You, T. ; Blaschke, Daniel ; Scholz, Andrea ; Shuai, Yanmin ; Luo, Wan ; Du, Nan ; Burger, Danilo ; Skorupa, Ilona ; Schmidt, Oliver G. ; Schmidt, Heidemarie
Author_Institution :
Chemnitz Univ. of Technol., Chemnitz, Germany
fYear :
2013
fDate :
26-27 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Resistive switching properties of multiferroic BiFeO3 and YMnO3 thin films grown by pulsed laser deposition technique have been investigated. Both material systems sandwiched between Au top and Pt/Ti bottom electrodes reveal nonvolatile resistive switching upon application of an electric field. BiFeO3 is switching in bipolar mode when a positive and negative bias is applied. The resistance ratio between high resistance and low resistance state is larger than two orders of magnitude. In contrary to BiFeO3, YMnO3 shows a unipolar resistive switching of abrupt nature with the difference up to five orders of magnitude between both resistance states. This work presents the results on resistive switching in BiFeO3 and YMnO3 and discusses the mechanisms of observed phenomena. Possible applications of our findings are shown on the example of nonvolatile data storage devices.
Keywords :
bismuth compounds; electric resistance; electrical conductivity transitions; electrical resistivity; electrodes; ferroelectric thin films; multiferroics; pulsed laser deposition; yttrium compounds; Au top electrode; BiFeO3; Pt-Ti bottom electrode; YMnO3; abrupt nature; bipolar mode; electric field application; high resistance state; low resistance state; material systems; negative bias; nonvolatile data storage devices; nonvolatile resistive switching; positive bias; pulsed laser deposition technique; resistance ratio; resistive switching properties; thin multiferroic films; unipolar resistive switching; Electrodes; Films; Gold; Nonvolatile memory; Resistance; Switches; bipolar; multiferroic; nonvolatile; resistive switching; unipolar;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International
Conference_Location :
Dresden
Print_ISBN :
978-1-4799-1250-6
Type :
conf
DOI :
10.1109/ISCDG.2013.6656319
Filename :
6656319
Link To Document :
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