• DocumentCode
    2110365
  • Title

    Present status and open issues of amorphous oxide semiconductor TFT technology

  • Author

    Nomura, Keigo

  • Author_Institution
    Qualcomm MEMS Technol. Inc., San Jose, CA, USA
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    We review the progress made to date on amorphous oxide semiconductor TFT technology. In addition, we discuss some remaining issues for manufacturing with the focus on the role of hydrogen impurity in amorphous oxide semiconductors.
  • Keywords
    amorphous semiconductors; thin film transistors; TFT technology; amorphous oxide semiconductor; hydrogen impurity; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Backplanes; Films; Hydrogen; Impurities; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656342
  • Filename
    6656342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2110365