DocumentCode :
2110697
Title :
Rapid melt grown germanium gate photoMOSFET on a silicon waveguide
Author :
Going, Ryan ; Tsu-Jae King Liu ; Wu, Ming C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
38
Lastpage :
39
Abstract :
We demonstrate the first monocrystalline germanium gate photoMOSFET integrated with silicon photonic waveguides and grating coupler. We measure a responsivity of 1.2 A/W at 1550nm with a 2×4 μm2 germanium gate.
Keywords :
MOSFET; crystal growth from melt; diffraction gratings; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical couplers; optical waveguides; silicon; Ge; Si; grating coupler; monocrystalline germanium gate; photoMOSFET; rapid melting; responsivity; silicon photonic waveguides; Couplers; Germanium; Logic gates; Optical waveguides; Silicon; Threshold voltage; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656355
Filename :
6656355
Link To Document :
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