DocumentCode
2110916
Title
Two-dimensional Modeling Of Self-aligned Silicide Process With A General-purpose Process Simulater OPUS
Author
Kai, K. ; Kuroda, S. ; Nishi, K.
Author_Institution
OKI Electric Industry Co., Ltd.
fYear
1993
fDate
14-15 May 1993
Firstpage
66
Lastpage
67
Keywords
Analytical models; Electric resistance; Equations; MOSFET circuits; Research and development; Silicides; Silicon; Simulated annealing; Surfaces; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN
0-7803-1338-0
Type
conf
DOI
10.1109/VPAD.1993.724725
Filename
724725
Link To Document