Title :
A new circuit topology for LNAs using partial source degeneration with double transistor connection to improve gain and input impedance matching flexibility
Author :
Tavora, A.S. ; Capovilla, C.E. ; Kretly, L.C.
Author_Institution :
FEEC, Univ. of Campinas, Campinas
Abstract :
One of the most important constraints that a designer must face in LNA design is the input impedance matching. The input impedance matching results in optimized gain and noise figure for the amplifier. Considering a single MOS transistor in common-source configuration, a degeneration of the source by an inductance Ls produces a desirable real part on the input impedance. Unfortunately, due to some technology restrains the designer must work with restringed options for Ls values limiting the capability to achieve a desirable impedance. The degeneration also introduces transconductance reduction due to the Ls voltage drop.
Keywords :
MOSFET; low noise amplifiers; network topology; LNA; MOS transistor; circuit topology; double transistor connection; impedance matching; input impedance matching flexibility; low noise amplifier; noise figure; partial source degeneration; transconductance reduction; CMOS technology; Character generation; Circuit topology; Energy consumption; Impedance matching; Inductance; Inductors; Low-noise amplifiers; Noise figure; Voltage;
Conference_Titel :
Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
Conference_Location :
Tel-Aviv
Print_ISBN :
978-1-4244-2097-1
Electronic_ISBN :
978-1-4244-2098-8
DOI :
10.1109/COMCAS.2008.4562781