Title :
Experimental evidence of surface mobile holes on GaN HEMT structure
Author :
Wen, Cheng P. ; Wang, Jia ; Hao, Y.L. ; Shen, Ben
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this paper, Hall measurement with an unconventional test vehicle was employed to verify the existence of these surface holes. The result represents a major breakthrough in understanding the effect of polarization induced electron-hole pairs on transistor electrical characteristics and reliability.
Keywords :
Hall mobility; III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device reliability; GaN; GaN HEMT structure; Hall measurement; polarization induced electron-hole pairs; semiconductor device reliability; surface mobile holes; transistor electrical characteristics; Charge carrier processes; Contact resistance; Electrodes; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Optical polarization; Schottky barriers; Slabs;
Conference_Titel :
Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
Conference_Location :
Tel-Aviv
Print_ISBN :
978-1-4244-2097-1
Electronic_ISBN :
978-1-4244-2098-8
DOI :
10.1109/COMCAS.2008.4562785
