A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

Author

Lime, Francois ; Moldovan, Oana ; Iniguez, B.

Author_Institution

Dept. of Electron. Electr. & Autom. Eng., Univ. Rovira y Virgili, Tarragona, Spain

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3036

Lastpage

3041

Abstract

In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel junctionless gate-all-around MOSFETs. The resulting model is analytical, explicit, and valid for depletion and accumulation, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.

Keywords

MOSFET; Poisson equation; semiconductor device models; technology CAD (electronics); Poisson equation; TCAD simulations; compact explicit model; cylindrical coordinates; drain current; long-channel gate-all-around junctionless MOSFET; Analytical models; Approximation methods; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; Compact model; drain current; gate-all-around (GAA) MOSFET; junctionless;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2340441

Filename

6875908