Title :
A Two-dimensional Process Model For Silicide Growth
Author :
Li, C.M. ; Crandle, T. ; Temkin, M. ; Hopper, P.
Author_Institution :
SILVACO International
Keywords :
Atomic layer deposition; Chemicals; Equations; Impurities; Oxidation; Semiconductor process modeling; Silicides; Silicon; Stress; Temperature;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724726
