• DocumentCode
    2111551
  • Title

    Finite-element based comparative analysis of the thermo-mechanical stresses affecting Si and SiC power switches

  • Author

    Escrouzailles, V. ; Castellazzi, A. ; Solomalala, P. ; Mermet-Guyennet, M.

  • Author_Institution
    ALSTOM-PRIMES, Semeac, France
  • fYear
    2011
  • fDate
    May 30 2011-June 3 2011
  • Firstpage
    1077
  • Lastpage
    1082
  • Abstract
    This work proposes a comparative study of the thermo-mechanical stress affecting a power switch when implemented with Si and SiC devices, respectively, and exposed to the same operational conditions. It employs advanced finite-element simulation analysis, adopting a dedicated procedure to implement the coupling between the thermal and mechanical domains, which require distinct numerical constructs for sensible results. The technique is applied to derive information about substrate and assembly design needs when making the transition from Si to SiC. As a case-study, a railway traction power load profile is considered.
  • Keywords
    elemental semiconductors; finite element analysis; power semiconductor switches; railways; silicon; silicon compounds; traction; wide band gap semiconductors; Si; Si power switches; SiC; SiC power switches; coupling; finite element simulation analysis; mechanical domains; power load profile; railway traction; thermal domains; thermomechanical stresses; Load modeling; Metals; Silicon; Silicon carbide; Strain; Stress; Finite-Element Simulation; Power Devices; Reliability; Silicon Carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
  • Conference_Location
    Jeju
  • ISSN
    2150-6078
  • Print_ISBN
    978-1-61284-958-4
  • Electronic_ISBN
    2150-6078
  • Type

    conf

  • DOI
    10.1109/ICPE.2011.5944657
  • Filename
    5944657