DocumentCode :
2111551
Title :
Finite-element based comparative analysis of the thermo-mechanical stresses affecting Si and SiC power switches
Author :
Escrouzailles, V. ; Castellazzi, A. ; Solomalala, P. ; Mermet-Guyennet, M.
Author_Institution :
ALSTOM-PRIMES, Semeac, France
fYear :
2011
fDate :
May 30 2011-June 3 2011
Firstpage :
1077
Lastpage :
1082
Abstract :
This work proposes a comparative study of the thermo-mechanical stress affecting a power switch when implemented with Si and SiC devices, respectively, and exposed to the same operational conditions. It employs advanced finite-element simulation analysis, adopting a dedicated procedure to implement the coupling between the thermal and mechanical domains, which require distinct numerical constructs for sensible results. The technique is applied to derive information about substrate and assembly design needs when making the transition from Si to SiC. As a case-study, a railway traction power load profile is considered.
Keywords :
elemental semiconductors; finite element analysis; power semiconductor switches; railways; silicon; silicon compounds; traction; wide band gap semiconductors; Si; Si power switches; SiC; SiC power switches; coupling; finite element simulation analysis; mechanical domains; power load profile; railway traction; thermal domains; thermomechanical stresses; Load modeling; Metals; Silicon; Silicon carbide; Strain; Stress; Finite-Element Simulation; Power Devices; Reliability; Silicon Carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location :
Jeju
ISSN :
2150-6078
Print_ISBN :
978-1-61284-958-4
Electronic_ISBN :
2150-6078
Type :
conf
DOI :
10.1109/ICPE.2011.5944657
Filename :
5944657
Link To Document :
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