DocumentCode
2111551
Title
Finite-element based comparative analysis of the thermo-mechanical stresses affecting Si and SiC power switches
Author
Escrouzailles, V. ; Castellazzi, A. ; Solomalala, P. ; Mermet-Guyennet, M.
Author_Institution
ALSTOM-PRIMES, Semeac, France
fYear
2011
fDate
May 30 2011-June 3 2011
Firstpage
1077
Lastpage
1082
Abstract
This work proposes a comparative study of the thermo-mechanical stress affecting a power switch when implemented with Si and SiC devices, respectively, and exposed to the same operational conditions. It employs advanced finite-element simulation analysis, adopting a dedicated procedure to implement the coupling between the thermal and mechanical domains, which require distinct numerical constructs for sensible results. The technique is applied to derive information about substrate and assembly design needs when making the transition from Si to SiC. As a case-study, a railway traction power load profile is considered.
Keywords
elemental semiconductors; finite element analysis; power semiconductor switches; railways; silicon; silicon compounds; traction; wide band gap semiconductors; Si; Si power switches; SiC; SiC power switches; coupling; finite element simulation analysis; mechanical domains; power load profile; railway traction; thermal domains; thermomechanical stresses; Load modeling; Metals; Silicon; Silicon carbide; Strain; Stress; Finite-Element Simulation; Power Devices; Reliability; Silicon Carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on
Conference_Location
Jeju
ISSN
2150-6078
Print_ISBN
978-1-61284-958-4
Electronic_ISBN
2150-6078
Type
conf
DOI
10.1109/ICPE.2011.5944657
Filename
5944657
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