Title :
Low noise radio frequency integrated circuits in 90 nm SOI CMOS up to 60 GHz
Author :
Ellinger, F. ; Wickert, M. ; Eickhoff, R. ; Mayer, U. ; Hauptmann, S.
Author_Institution :
Chair for Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden
Abstract :
In this paper we present the results of several key circuit blocks such as amplifiers, mixers and an oscillator in a 90 nm SOI CMOS technology. The circuits were optimized for low noise. Leading-edge results such as 3.8 dB noise figure (NF) up to 40 GHz and more than 8 dB gain up to 60 GHz for a wideband amplifier, a low loss of only 4.8 dB for a drain pumped transconductance mixer at 35 GHz consuming zero DC power, a third order intercept point (IIP3) of 15 dBm for a resistive mixer, and a phase noise of - 90 dBc/Hz at 1 MHz offset for a 60 GHz VCO (voltage controlled oscillator) are presented.
Keywords :
CMOS integrated circuits; millimetre wave mixers; radiofrequency integrated circuits; silicon-on-insulator; voltage-controlled oscillators; wideband amplifiers; SOI CMOS technology; VCO; drain pumped transconductance mixer; frequency 60 GHz; low noise radio frequency integrated circuit; phase noise; resistive mixer; silicon-on-insulator; size 90 nm; technology; third order intercept point; voltage controlled oscillator; Broadband amplifiers; CMOS technology; Gain; Integrated circuit noise; Integrated circuit technology; Noise figure; Noise measurement; Radiofrequency amplifiers; Radiofrequency integrated circuits; Voltage-controlled oscillators;
Conference_Titel :
Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on
Conference_Location :
Tel-Aviv
Print_ISBN :
978-1-4244-2097-1
Electronic_ISBN :
978-1-4244-2098-8
DOI :
10.1109/COMCAS.2008.4562811
