DocumentCode :
2112188
Title :
Energy transfer in epitaxial Er2O3 thin films grown on Si(111) substrates
Author :
Tawara, T. ; Hozumi, T. ; Omi, H. ; Kaji, R. ; Adachi, Shuichi ; Gotoh, H. ; Sogawa, T.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
149
Lastpage :
150
Abstract :
Time constants of a resonant energy transfer between Er ions in epitaxial Er2O3 grown on Si(111) are investigated for the coherent manipulation of populations and experimentally estimated to be several microseconds by resonant excitation photoluminescence.
Keywords :
epitaxial layers; erbium compounds; photoluminescence; Er2O3; Si; Si(111) substrates; coherent populations; epitaxial thin films; resonant energy transfer; resonant excitation photoluminescence; time constants; Energy exchange; Energy states; Erbium; Ions; Manifolds; Sociology; Statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656416
Filename :
6656416
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2112188
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