DocumentCode
2112265
Title
ZnO p-n homojunction random laser based on nitrogen doped p-type nanowires
Author
Jian Huang ; Sheng Chu ; Jieying Kong ; Jianlin Liu
Author_Institution
Dept. of Electr. Eng., Univ. of California at Riverside, Riverside, CA, USA
fYear
2013
fDate
8-12 Sept. 2013
Firstpage
155
Lastpage
156
Abstract
We report electrically pumped ZnO homojunction random lasers based on nitrogen doped p-type ZnO nanowires and undoped n-type ZnO thin film. The laser devices with and without distributed Bragg reflector are studied.
Keywords
II-VI semiconductors; distributed Bragg reflector lasers; nanophotonics; nanowires; nitrogen; optical pumping; p-n junctions; semiconductor lasers; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; ZnO:N; distributed Bragg reflector; electrically pumped p-n homojunction random laser; laser devices; nitrogen doped p-type nanowires; undoped n-type thin film; Distributed Bragg reflectors; Nanowires; Optical pumping; Pump lasers; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2013 IEEE
Conference_Location
Bellevue, WA
Print_ISBN
978-1-4577-1506-8
Type
conf
DOI
10.1109/IPCon.2013.6656419
Filename
6656419
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