Title :
Design, modeling and fabrication of a CMOS compatible p-n junction avalanche photodiode
Author :
Hossain, M. Mofazzal ; Ghasemi, Javad ; Zarkesh-Ha, Payman ; Hayat, Majeed M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
CMOS compatible avalanche photodiode is designed, modeled and fabricated. Calculated mean gain, avalanche breakdown voltage, excess-noise factor, as well as the measured dark-current and spectral response are reported.
Keywords :
CMOS integrated circuits; avalanche breakdown; avalanche photodiodes; dark conductivity; optical design techniques; optical fabrication; p-n junctions; semiconductor device models; CMOS compatible p-n junction avalanche photodiode; avalanche breakdown voltage; dark current; excess-noise factor; mean gain; optical design; optical fabrication; spectral response; Avalanche photodiodes; CMOS integrated circuits; Dark current; Ionization; Noise; Silicon; Voltage measurement; CMOS; avalanche photodiode; dead space; excess noise factor; impact ionization; ionization coefficients; silicon;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656429
