Title :
APCVD doped oxides used as etch mask in KOH solution
Author :
Cosmin, P. ; Modreanu, M. ; Cosmin, S. ; Dunare, C. ; Popescu, D.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosphosilicate glass with different content of phosphorus and boron were studied as masks for etching in KOH solution. The experiments draw the conclusion that the best film is densified borophosphosilicate glass with 4 wt% P and 23 wt.% B. Also, good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metallisation process
Keywords :
borosilicate glasses; chemical vapour deposition; densification; dielectric thin films; etching; masks; phosphosilicate glasses; silicon compounds; APCVD doped oxides; B2O3-P2O5-SiO2; B2O3-SiO2; BPSG; BSG; KOH solution; P2O5-SiO2; PSG; SiO2; borophosphosilicate glass; borosilicate glass; densification; etch mask; metallisation; phosphosilicate glass; silicon substrate; Etching; Nitrogen; Testing;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557363
