• DocumentCode
    2112698
  • Title

    High-speed low-noise PNP PIN phototransistor integrated in a 0.35 µm CMOS process

  • Author

    Kostov, Plamen ; Gaberl, Wolfgang ; Hofbauer, Michael ; Zimmermann, Horst

  • Author_Institution
    Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
  • fYear
    2013
  • fDate
    8-12 Sept. 2013
  • Firstpage
    588
  • Lastpage
    589
  • Abstract
    A low noise 50×100 μm2 pnp pin phototransistor is presented in this paper. The phototransistor is fabricated in a 0.35 μm CMOS process. An optimized layout leads to responsivities up to 1.99 A/W and bandwidths up to 151.4 MHz. Noise measurements show a low total output current noise spectral density of only 6.67×10-24 A2/Hz for a collector current of 2 μA.
  • Keywords
    CMOS integrated circuits; integrated optoelectronics; phototransistors; CMOS process; collector current; current 2 muA; high-speed low-noise pnp pin phototransistor; noise measurements; optimized layout; output current noise spectral density; responsivities; size 0.35 mum; Bandwidth; CMOS integrated circuits; Current measurement; Noise; Noise measurement; Phototransistors; Wavelength measurement; CMOS; PIN; PNP; bandwidth; light detection; noise; phototransistor; responsivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2013 IEEE
  • Conference_Location
    Bellevue, WA
  • Print_ISBN
    978-1-4577-1506-8
  • Type

    conf

  • DOI
    10.1109/IPCon.2013.6656431
  • Filename
    6656431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2112698