Title :
High-speed low-noise PNP PIN phototransistor integrated in a 0.35 µm CMOS process
Author :
Kostov, Plamen ; Gaberl, Wolfgang ; Hofbauer, Michael ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
Abstract :
A low noise 50×100 μm2 pnp pin phototransistor is presented in this paper. The phototransistor is fabricated in a 0.35 μm CMOS process. An optimized layout leads to responsivities up to 1.99 A/W and bandwidths up to 151.4 MHz. Noise measurements show a low total output current noise spectral density of only 6.67×10-24 A2/Hz for a collector current of 2 μA.
Keywords :
CMOS integrated circuits; integrated optoelectronics; phototransistors; CMOS process; collector current; current 2 muA; high-speed low-noise pnp pin phototransistor; noise measurements; optimized layout; output current noise spectral density; responsivities; size 0.35 mum; Bandwidth; CMOS integrated circuits; Current measurement; Noise; Noise measurement; Phototransistors; Wavelength measurement; CMOS; PIN; PNP; bandwidth; light detection; noise; phototransistor; responsivity;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656431
