DocumentCode :
2112712
Title :
Time-of-flight range finding sensor using a pnp bipolar phototransistor in a 0.35 µm CMOS process with high immunity against background light
Author :
Kostov, Plamen ; Davidovic, M. ; Hofbauer, Michael ; Seiter, J. ; Gaberl, Wolfgang ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
590
Lastpage :
591
Abstract :
A time-of-flight range finding sensor using a monolithic integrated pnp phototransistor is presented. The phototransistor was specially adapted for the requirements of the time-of-flight application. The sensor has a fill factor of 75 % and achieves standard deviations down to 7.3 mm at 6250 fps and an incident optical power of -40 dBm.
Keywords :
CMOS integrated circuits; bipolar transistors; distance measurement; integrated optoelectronics; monolithic integrated circuits; optical sensors; phototransistors; CMOS process; PNP bipolar phototransistor; background light; fill factor; incident optical power; monolithic integrated pnp bipolar phototransistor; size 0.35 mum; standard deviations; time-of-flight application; time-of-flight range finding sensor; Optical attenuators; Optical fibers; Optical saturation; Optical sensors; Phototransistors; Standards; CMOS; PIN; TOF; Time of Flight; bandwidth; distance measuremen; noise; phototransistor; responsivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656432
Filename :
6656432
Link To Document :
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