Title :
Manufacturability and sustainability analysis of nano-scale manufacturing
Author :
Yuan, Chris Y. ; Dornfeld, David
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Berkeley, CA
Abstract :
In this project, atomic layer deposition (ALD) of Al2O3 high-k dielectric films on silicon wafers is studied as a model process of nanotechnology. The ALD process uses trimethyl aluminum as the metal source and water as the oxidant.
Keywords :
aluminium compounds; atomic layer deposition; high-k dielectric thin films; nanotechnology; Al2O3; atomic layer deposition; high-k dielectric films; manufacturability analysis; nanoscale manufacturing; nanotechnology; silicon wafers; sustainability analysis; trimethyl aluminum; Aluminum oxide; Atomic layer deposition; High-K gate dielectrics; Manufacturing; Mechanical engineering; Merging; Performance analysis; Thickness control; USA Councils; Water;
Conference_Titel :
Electronics and the Environment, 2008. ISEE 2008. IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2272-2
Electronic_ISBN :
978-1-4244-2298-2
DOI :
10.1109/ISEE.2008.4562860
