Title :
A 16-element tunnel diode grid oscillator
Author :
De Lisio, M.P. ; Davis, J.F. ; Shi-Jie Li ; Rutledge, D.B. ; Rosenberg, J.J.
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A 16-channel tunnel diode grid oscillator has been fabricated. The grid oscillates at 1.86 GHz with an effective radiated power (ERP) of 1.3 mW. Frequency components were observed at multiples of one-third of the main frequency, but at power levels at least 16 dB lower. The average single-sideband (SSB) noise level was measured to be -76 dBc/Hz at an offset of 100 kHz from the carrier.
Keywords :
UHF oscillators; resonant tunnelling diodes; tunnel diode oscillators; 1.3 mW; 1.86 GHz; 100 kHz; 16-channel tunnel diode grid oscillator; ERP; average single-sideband noise level; carrier; effective radiated power; frequency components; power levels; resonant tunneling diode; Educational institutions; Feedback; Frequency; Mesh generation; Oscillators; Planar arrays; Power generation; Resistors; Resonant tunneling devices; Schottky diodes;
Conference_Titel :
Antennas and Propagation Society International Symposium, 1995. AP-S. Digest
Conference_Location :
Newport Beach, CA, USA
Print_ISBN :
0-7803-2719-5
DOI :
10.1109/APS.1995.530254
