DocumentCode :
2113417
Title :
InP membrane on silicon integration technology
Author :
Smit, Meint K.
Author_Institution :
COBRA Res. Inst., Tech. Univ. Eindhoven, Eindhoven, Netherlands
fYear :
2013
fDate :
8-12 Sept. 2013
Firstpage :
637
Lastpage :
638
Abstract :
Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.
Keywords :
III-V semiconductors; indium compounds; integrated optics; light sources; membranes; silicon; IMOS; InP; InP membrane-on-silicon; Si; light sources; silicon integration technology; silicon photonics; Couplers; Indium phosphide; Lasers; Optical waveguides; Photonics; Silicon; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
Type :
conf
DOI :
10.1109/IPCon.2013.6656456
Filename :
6656456
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2113417
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