Title :
2D Process Simulation With Accurate Dopant And Stress Profiles Calculations
Author :
Collard, D. ; Senez, V. ; Baccus, B.
Author_Institution :
IEMN
Keywords :
Computational modeling; Doping profiles; Finite element methods; Grid computing; Oxidation; Semiconductor process modeling; Shape; Silicon; Stress; Topology;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724735
