• DocumentCode
    2113701
  • Title

    2D Process Simulation With Accurate Dopant And Stress Profiles Calculations

  • Author

    Collard, D. ; Senez, V. ; Baccus, B.

  • Author_Institution
    IEMN
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    92
  • Lastpage
    93
  • Keywords
    Computational modeling; Doping profiles; Finite element methods; Grid computing; Oxidation; Semiconductor process modeling; Shape; Silicon; Stress; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724735
  • Filename
    724735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2113701